PART |
Description |
Maker |
28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
EN29F010-45TCP EN29F010-70JIP EN29F010-70PCP EN29F |
1 Megabit (128K x 8-bit) 5V Flash Memory 1兆位128K的8位)5V的快闪记忆体 Octal Buffer/Line Driver with 3-STATE Outputs; Package: SOIC-Wide; No of Pins: 20; Container: Tape & Reel 1兆位128K的8位)5V的快闪记忆体 1 Megabit (128K x 8-bit) 5V Flash Memory 1兆位28K的8位)5V的快闪记忆体
|
Electronic Theatre Controls, Inc. Eon Silicon Solution Inc. Eon Silicon Solution In...
|
AT28C010 AT28C010-12 AT28C010-12DM_883 AT28C010-15 |
1 Megabit 128K x 8 Paged CMOS E2PROM 1 Megabit (128K x 8) From old datasheet system
|
ATMEL[ATMEL Corporation]
|
AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta DB25SC37 DSUB 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32 1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
|
ATMEL[ATMEL Corporation] Atmel Corp. Atmel, Corp.
|
28LV010RT4FS25 28LV010 28LV010RPDB20 28LV010RPDB-2 |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
|
MAXWELL[Maxwell Technologies]
|
28C010TRPDB-12 28C010TRPDB-15 28C010TRPDE-12 28C01 |
1 Megabit (128K x 8-Bit) EEPROM
|
MAXWELL[Maxwell Technologies]
|
28C011TRTFS-20 28C011T 28C011TRPF 28C011TRPFB 28C0 |
1 Megabit (128K x 8-Bit) EEPROM
|
MAXWELL[Maxwell Technologies]
|
27C010TRT4FS-20 27C010T 27C010TRPFB-12 27C010TRPFB |
1 Megabit (128K x 8-Bit) - OTP EPROM
|
MAXWELL[Maxwell Technologies]
|
AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010- |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 150 ns, PDIP32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 200 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 CMOS Dual Binary Up-Counter 16-TSSOP -55 to 125 CMOS Dual Binary Up-Counter 16-SO -55 to 125 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
|
ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc.
|
EN29LV010 EN29LV010-45RJC EN29LV010-45RJCP EN29LV0 |
1 Megabit (128K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
|
N.A. ETC Eon Silicon Solution Inc.
|
AT28C01006 AT28C010 AT28C010E-15JI AT28C010E-15PI |
128K X 8 EEPROM 5V, 150 ns, PDIP32 120NS, TSOP, IND TEMP, GREEN(EEPROM) 128K X 8 EEPROM 5V, 120 ns, PDIP32 1-megabit (128K x 8) Paged Parallel EEPROM
|
Atmel, Corp. ATMEL Corporation
|
AM29LV200B AM29LV200BB-120EC AM29LV200BB-120ECB AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 80 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PDSO48 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位).0伏的CMOS引导扇区闪存
|
http:// AMD[Advanced Micro Devices] Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|